Paper on Exciton Trapping in GaAs Published in Physical Review B

Our paper on the atomistic imaging and modeling of exciton trapping by defects in GaAs has just been published in Physical Review B! Led by Mikhail Durnev at the Ioffe Institute, this paper details an approach to build more accurate first principles models of stacking fault excitons using insights from state-of-the-art scanning transmission electron microscopy. This work informs our understanding of the structure and properties of an important class of excitonic materials.

From the abstract:

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging cou- pled with density functional and effective-mass theory to build a microscopic model of the stacking- fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

To view the manuscript, visit: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.101.125420

To download the manuscript directly, click here.