Ge-Based Oxides Paper Published in Comms Mater

Our team’s paper on hybrid molecular beam epitaxy (MBE) of Ge-based oxides, led by Fengdeng Liu and Bharat Jalan at the University of Minnesota, was recently published in Communications Materials! We show that is possible to produce high-quality perovskite germanate thin films using hybrid MBE, paving the way for design of germanium-based electronics.

From the abstract:

Germanium-based oxides such as rutile GeO2 are garnering attention owing to their wide band gaps and the prospects for ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP) (an organometallic chemical precursor) as a source of Ge for the demonstration of hybrid molecular beam epitaxy (MBE) for Ge-containing compounds. We use Sn1-xGexO2 and SrSn1-xGexO3 as model systems to demonstrate this new synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn1-xGexO2 on TiO2(001) substrates up to x = 0.54 and coherent perovskite SrSn1- xGexO3 on GdScO3(110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that Ge preferentially occupies the Sn site, as opposed to the Sr site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid MBE, and thus open the door to high-quality perovskite germanate films.

To view the manuscript, visit: https://doi.org/10.1038/s43246-022-00290-y

Download the article directly here.